Modulation of carrier density in ZnO nanowires without impurity doping

Abstract

ZnO nanowire based field effect transistor devices show the distinct performance depending on whether comparably oxygen-rich or oxygen-poor conditions were used for nanowire growth. Higher on-state current flows through the ZnO nanowire channel grown under oxygen-poor condition. A possible origin of this characteristic is discussed based on a photoluminescence analysis of the nanowire samples. The observed effect should be taken into account for ZnO nanowire based devices and applications.