Fabrication and Characterization of Field Effect Transistor Based on High-Aspect Ratio Sulfur-Doped ZnO Nanowires.

Abstract

Well-crystalline sulfur (S) doped ZnO nanowires have been grown via a simple thermal evaporation process on Si substrate using high purity zinc and sulfur powders in presence of oxygen. The as-grown S:ZnO nanowires were characterized in terms of their morphological structural, compositional and optical properties using several techniques such as FESEM, TEM, XRD, EDS and PL. The morphological characterizations revealed that the as-grown nanowires had diameters in the range of 60-100 nm with lengths 5-15 μm. The details structural properties confirmed the well-crystallinity and wurtzite hexagonal phase for the prepared nanowires. Room temperature photoluminescence (PL) spectrum showed a strong green band with a suppressed UV emission. The electrical properties of single S:ZnO nanowire was examined by fabricating single nanowire based field effect transistors (FETs). The detailed electrical transport results showed that S:ZnO nanowires possess n-type semiconducting behavior and exhibited an electron mobility of -67.7 cm2 V(-1) s(-1) and a carrier concentration of 2 x 10(17) cm(-3), respectively.