Abstract
A new method of molecular beam epitaxy for III–V compounds called modulation molecular beam epitaxy (M-MBE) is proposed. In this method, group III flux modulated in pulse is introduced under a continuous supply of low-pressure As4 flux. This causes a persistent and periodic change of the surface reconstruction and associated intensity oscillation of reflection high-energy electron diffraction. The growth mechanism in this method is discussed in detail for homo- and heteroepitaxy. The optical property of the AlAs-GaAs single quantum well (SQW) structure is investigated to evaluate a heterointerface grown by this method. SQWs grown at 300° C show a good characteristic almost equal to those grown at high temperature by the conventional MBE method with growth interruptions. In contrast, SQWs grown at 580° C have rather poor characteristics.
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