Modulating the Performance of MoS2-Based Nanocrystal Memory via Ag Ion Implantation

Abstract

Nonvolatile flash memory is an important component of the semiconductor memory device, which is widely used in a variety of portable electronic equipment. As traditional flash memory approaches its physical limit, reduced reliability and performance degradation have become unavoidable. Two-dimensional (2D) layered materials exhibit excellent electronic properties even at the atomic level and have been considered as a promising development direction for future flash memory. Here, we report a MoS2-based Ag nanocrystal memory. The fabricated memory device can form the memory stack in one step through metal ion implantation, omitting tedious deposition steps compared to the conventional process. The fabricated silver nanocrystal memory exhibits a 9 V memory window and a high ON/OFF current ratio (>107). In addition, the device also exhibits good endurance characteristics of more than 104 cycles. The ion implantation technology and the 2D nature of the channel can be used for the fabrication of flexible nanoelectronic memory devices with large-scale integration.