Charge Trap Memory Based on Few-Layer Black Phosphorus and High-K Materials

Abstract

Due to the unique properties of the two dimensional material, it has great potential for future information technology devices. Based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3/HfO2/Al2O3, we successfully made the nonvolatile charge-trap memory devices. Because of the extraordinary trapping ability of the high-k HfO2, an unprecedented memory window exceeding 12 V is obtained. The device shows a high endurance of over 120 cycles and a stable retention of ∼30% charge loss after 10 years, even lower than the reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices[1]. References (1) Qi Feng, Faguang Yan, Wengang Luo and Kaiyou Wang, Nanoscale, 8(2016)2686.