Abstract
A general analytical expression is reported for the Drude model's dielectric function of free carrier in multi-valley IV-VI compound semiconductor in the magnetic field. The modifications of the energy band non-parabolicity and free carrier re-population are introduced to the dielectric function in combination with the\(\vec k \cdot \vec P\) model. The difference of the dielectric function between the modified Drude model and the classical Drude model is demonstrated by the calculation for the typical IV-VI compound semiconductor material PbTe.
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