Modelling of transport and recombination of photocarriers in un-doped hydrogenated amorphous silicon (a-Si:H)

Abstract

In this paper, we report on the simulation of steady state photoconductivity in un-doped a- Si:H at temperatures from 30 to 500 K. The model is based on recombination at dangling bond states and band tail states. It takes also into account the hopping transitions in the conduction hand tail states to describe the conduction in localized states at low temperatures. At high temperatures, the multiple trapping process is considered to describe the conduction in extended states. The density of states includes the exponential density of conduction band tail states and valence band tail slates and the density of dangling bond states. This later is determined by the Defect Pool Model ‘DPM’. The experimental features observed on the temperature dependence of the photoconductivity are generally the thermal quenching, the low activated region and the temperature independent photoconductivity at very low temperatures. All these observations are well reproduced by the model in un-doped a-Si:H. By the examination of the relative contributions of two processes of conduction: (i) the multiple trapping and (ii) the multiple trapping associated with the hopping, the model results show that the multiple trapping process of electrons where the conduction is assured by free carriers in the thermal quenching region above 140 K is important while the hopping process of electrons is negligible. At 140 K and below, the hopping transport of electrons in the conduction band tail states makes an important contribution in the photoconductivity. It explains successfully the low activated region and the temperature independent photoconductivity at very low temperatures.