Abstract
In this work, a 2D modelling of tri-material gate stack gate all around (TMGSGAA) MOSFET considering quantum mechanical effects is developed and its analog/RF characteristics are simulated. A self-consistent solution of 2D Poisson-Schrödinger equation has been obtained using Legendre Wavelets. It provides accurate results by performing efficient computation using adaptive mesh obtained by multiresolution approach. The accuracy of the method has been verified with TCAD simulation results. A systematic, quantitative investigation of main figure of merit (FOMs) for the device is carried out to demonstrate its improved RF/analog performance. The results show an improvement in drain current, Ion/Ioff ratio, transconductance, fT and fmax providing superior RF performance under low-power operating conditions.
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