Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Abstract

In this paper, the quantum mechanical (QM) effects in bulk MOSFETs and their modeling approaches in the compact modeling framework are reviewed. As the device dimensions are scaled to the sub-100 nm range, QM effects affect the device properties, such as effective oxide thickness, inversion layer charge density and profile, threshold voltage, effective bandgap, gate capacitance, mobility, surface potential, subthreshold characteristics, drain current, and gate leakage current. The classical theory is no longer sufficient for accurate modeling of these device characteristics. In this paper, models which have incorporated QM effects to obtain the device characteristics are discussed and compared. The roles of QM effects in affecting some of the device properties are also presented.