Abstract
A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔVTHQM) and the gate capacitance (Cg) degradation. First of all, ΔVTHQM induced by quantum mechanical (QM) effects is modeled. The Cg degradation is then modeled by introducing the inversion layer centroid. With ΔVTHQM and the Cg degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.
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