Modelling and kink correction of bulk CMOS at liquid helium temperature

Abstract

Cryogenic characterisation and modelling of 0.18 μm CMOS technology (1.8 and 5 V) is presented in this Letter. Several P-type MOS and N-type MOS transistors with different width to length ratios were extensively characterised under various bias conditions at temperatures ranging from 300 K down to 4.2 K. The authors extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. A simple subcircuit was built to correct the kink effect. The RMS error of test results and modelling results is <;3%.