Abstract
As operating frequencies of Si FETs continue to grow, commercial circuit modeling tools must provide accurate simulations at very high frequencies with the ability to model plasmonic FETs in large and complex circuits. Traditional compact SPICE models used by commercial CAD tools model the channel resistance and capacitance and gate resistance as single lumped elements or use approximations to model the distributed nature of the FET channel. At high frequencies, these models become inaccurate and fail to model device physics properly. To describe plasmonic FETs, a THz SPICE model is developed for Si FETs. The THz SPICE model is validated experimentally to be in close agreement with measured results. The model is used to show predicted device response at different technology nodes.
Published Version
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