Modeling Radiation-Induced Mobility Degradation in MOSFETs

Abstract

This paper analyses the relationship between two forms of channel-carrier mobility models, both of them employing linear combinations of oxide- and interface-trapped charge densities. The original form of this model is based on the overall densities of oxide- and interface-trapped charge, while another form of this model uses the radiation-induced charge densities as a convenient way of expressing the radiation-induced mobility degradation. It is shown that the radiation-degradation form of the mobility model employs coefficients which are dependent on both the bulk and the initial mobility values. This fact is very important in terms of proper analysis of experimental results on radiation-induced mobility degradation.