Modeling of Time-Dependent Defect Generation during Constant Voltage Stress for Thin Gate Oxides of Submicron Metal–Oxide–Silicon Field-Effect Transistor

Abstract

In this study, we examined time-evolution defect generation under constant-voltage stress for a 3-nm-thick gate oxide metal–oxide–silicon field-effect transistor (MOSFET). Defect generation under the stress is related to the density of electron traps that are generated from the relaxation of strained Si–O bonds by injection holes. The solution for the time-dependent defect generation was calculated using short-time-measured gate leakage data and analytical models. This approach was taken by fitting an effective activation energy distribution from time-evolution-degradation electrical data. We assume that the disorder-induced variations in Si–O activation energy follow a Fermi-derivative distribution. Our methodology will provide the exact and convenient method of determining the degradation of gate oxides of nano scaled complementary MOS (CMOS) devices.