Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base

Abstract

We report on the modeling of the temperature field and supersaturation in front of the SiC crystal growth interface of a physical vapor transport growth configuration. The data are compared with experimental results, like the growth of free standing 3C-SiC wafers with a diameter of 50 mm and a thickness of 870 µm. Special emphases is put on the precise handling of the materials properties which include the temperature dependency of the heat and electrical conductivity of the graphite parts at temperatures above 2000 °C.