Abstract
Structural investigation of the seeding process for the physical vapor transport (PVT) growth of 4H–SiC single crystals was conducted by high-resolution x-ray diffraction (HRXRD) and synchrotron x-ray topography. Characteristic lattice plane bending behavior was observed in the near-seed regions of the grown crystals. The bending of the (112̄0) lattice plane was localized near the seed/grown crystal interface, and the (0001) basal plane bent convexly in the growth direction near the interface, indicative of the insertion of extra-half planes pointing toward the growth direction during the seeding process for PVT growth. This study discusses a possible mechanism for the observed lattice plane bending and sheds light on defect formation processes during the PVT growth of 4H–SiC single crystals.
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