Abstract
The inverse spin Hall effect (ISHE) has been recently demonstrated through the photoinduced inverse spin Hall effect (PISHE), where a focused laser normal to the device plane generates photocurrent that depends on the helicity of the photoexcitation. Here, we have employed a finite element method to rigorously simulate the helicity-dependent photocurrent (HDPC) under local helical photoexcitation, taking into account the complications of minority carriers, metal contact junctions, and spin relaxation. We found that the ISHE-induced electromotive force is inversely proportional to the doping level of the material, caused by the diffusion and drift current balance. Furthermore, the HDPC near the metal contact can either increase or decrease, because of the competing mechanisms of fast carrier recombination and spin relaxation at the contact. These simulation results provide insightful visualization of charge, spin, electric field, and current density distributions and deeper understanding of photoinduced ISHE.
Published Version
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