Abstract
An ESD (electro-static-discharge) compact modeling methodology using a macro-modeling approach is introduced in this work for high voltage Lateral Double-diffused MOS (LDMOS) devices and new high-voltage protection clamps. The distinct characteristics of high voltage devices during high current/fast transient events are modeled without introducing convergence problems in ESD simulations for complex high voltage mixed-signal applications. The LDMOS ESD model consists of a sub-circuit that is built on top of the standard high-voltage MOS model (MOS20). The high voltage clamps, consisting of thyristor-type devices, are modeled using advanced bipolar junction transistor models.
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