Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers

Abstract

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be grown on GaAs substrate while having a bandgap smaller than that of GaInNAs. The influence of nitrogen and antimony on the bandgap and the transition energy is explored. Also, the effect of these two elements on the optical gain and threshold current density is investigated. For example, a structure composed of one 7.5nm thick quantum well of material with In=30%, N=3.5%, Sb=1% composition exhibits a threshold current density of 339.8A/cm2 and an emission wavelength of 1.5365μm (at T=300K). It can be shown that increasing the concentration of indium to 35% with a concentration of nitrogen and antimony, of 2.5% and 1%, respectively, results in a decrease of the threshold current density down to 253.7A/cm2 for a two well structure. Same structure incorporating five wells shows a threshold current density as low as 221.4A/cm2 for T=300K, which agrees well with the reported experimental results.