Modeling of Ballistic Monolayer Black Phosphorus MOSFETs

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In this paper, we present two accurate physics-based models of ballistic metal–oxide–semiconductor field-effect transistors (MOSFETs), both using less than ten parameters. These models—the capacitor model and the virtual source model—are based on the Landauer–Buttiker formalism. We show that the nonthermalization of charge carriers in the channels of ballistic MOSFETs leads to two critical effects that need to be considered in the modeling: the ballistic drain-induced barrier lowering (DIBL) effect and the floating source effect. The ballistic DIBL effect is responsible for a drain voltage dependence of the DIBL parameter; the floating source effect intensifies the injection of high-energy carriers from the source as the gate voltage increases. Specifically, the analysis is carried out on devices composed of monolayer black phosphorus, a 2-D semiconductor with unique electronic and mechanical properties, which make it a promising candidate for 2-D digital logic applications.