Abstract
A novel bi-material buffer gate 4H-SiC metal semiconductor field effect transistor (BMGFET) is proposed for the purpose of restraining the drain-induced barrier lowering (DIBL) effect. The analytical model of the DIBL effect for the BMGFET is built and its occurrence degree is evaluated by analyzing the dependence of the threshold voltage shift and the sub-threshold slope factor on the drain bias and the structure parameters. The results reveal that the DIBL effect is significantly suppressed because there appears a valley in the graph of the potential distribution function of the BMG structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
