Abstract
We present ab inito calculations of a realistic HfO 2/SiO 2/Si interface and discuss its structural and electronic properties. Calculations reveal a variety of possible non-epitaxial atomic arrangements at the interface, associated with a substantial atomic disorder in the SiO 2 and HfO 2 region. Calculated band alignment, although predictably smaller than experimental values, allows for instructive analysis of band gap variation, dipole formation and defects near the interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
