Abstract
Abstract In this paper, we analyze the nonstationary heat transfer during growth of epitaxial layers in epitaxy reactors from the gas phase. Based on this analysis, we formulate several recommendations on organization of heating of the growth zone for increasing homogeneity of epitaxial layers. We introduce an analytical approach for analysis of heat transfer during the growth of epitaxial layers from the gas phase. The approach gives a possibility to simultaneously take into account the nonlinearity of heat transfer, as well as changes of their parameters both in space and time.
Highlights
Method of SolutionDifferent heterostructures are widely used to form solid-state electronics devices
We introduce an analytical approach for analysis of heat transfer during the growth of epitaxial layers from the gas phase
The main aim of the present paper is to study the change in properties of epitaxial layer growth, along with changes in technological process parameters and account native convection
Summary
Different heterostructures are widely used to form solid-state electronics devices. To determine the first-order approximation of components of speed of flow of the mixture of gases from this framework approach, we replace the required functions with their average values (vr α1r, vj α1j, and vz α1z) in right sides of the equations (5). ∆= A1 ( B2C3 − B3C2 ) − B1 ( A2C3 − A3C2 ) + C1 ( A2B3 − A3B2 ) , To determine spatio-temporal distribution of temperature and concentration of the gas mixture, we used the method of averaging functional corrections. For the second-order approximations of temperature and concentration of the gas mixture, we used the method of averaging the functional corrections [14,15,16,17,18,19], i.e., by replacing the required functions in the right sides of Eqs. { } −∫ (Θ − t ) ∫ ∫ r α2C − α1C + C1 (R,φ, z,τ ) ⋅ vr ( R,φ, z,τ ) − vr (R,φ, z,τ ) dzdφdt ×
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