Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors TFT for Large Area and Flexible Microelectronics

Piyush Eklavya, ,Ramavenkateswaran N,Shrey Vaishnav,Nirmalya Debnath

doi:10.35940/ijeat.e9477.069520

Abstract

The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

Highlights

Silicon based Thin Film Transistors have been studied extensively due to their wide range of application in flat-panel displays
The thin film transistor has been successfully simulated with appropriate device parameters and test circuits for future scope of inclusion of such device libraries into the open-source software
The universal amorphous silicon Thin Film Transistor (TFT) with a silicon dioxide as a dielectric has taken for simulation of circuits in this paper

Summary

INTRODUCTION

Silicon based Thin Film Transistors have been studied extensively due to their wide range of application in flat-panel displays. The thin film transistors are fabricated using different types of semiconducting materials including zinc oxide, silicon, carbon-based materials, etc. Recent access to the useful and important tools have made easier to innovate and allow experiments to create TFTs using organic materials. There is a need to promote more open-source device support for the thin film transistors. The thin film transistor has been successfully simulated with appropriate device parameters and test circuits for future scope of inclusion of such device libraries into the open-source software. The universal amorphous silicon TFT with a silicon dioxide as a dielectric has taken for simulation of circuits in this paper

Methodology Adopted

SPICE Code

CONCLUSIONS