Abstract
The relationship between breakdown voltage (B.V.) and drift layer charge (Q D ) for RESURF type lateral PN diodes was investigated both theoretically using a 2D computer program and experimentally. As an added variable, substrate doping variations were modeled to verify their effect on the diode B.V. rating. The importance of tight charge control in the drift layer region was demonstrated (both theoretically and experimentally). It is concluded that implantation is necessary to yield a tight B.V. distribution. Also shown experimentally is the associated degradation in B.V. that results when the N+ and/or P+ regions have reduced radii of curvature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
