Si/SiC heterojunction lateral double‐diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology

Abstract

A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the breakdown point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade-off relationship between breakdown voltage (BV) and specific on-resistance ( R on,sp ). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double-diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure-of-merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm 2 , respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.