Abstract
Dual-frequency capacitively coupled plasma (DF-CCP) etcher has become the mainstream in dielectric etcher. By building a 2D axisymmetric model of 300mm DF-CCP etcher in CFD-ACE+ software, plasma simulation experiments are carried out by orthogonal design. Then a process model based on simulation results is proposed to analysis influence of key process parameters including high frequency voltage, low frequency voltage, and chamber pressure and center/edge flow ratio on chamber plasma characteristics. Finally, to get high plasma uniformity and plasma density, process optimizations are carried out.
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