Abstract
Control of ion energy distributions (IEDs) onto the surface of wafers is an ongoing challenge in microelectronics fabrication. The use of capacitively coupled plasmas (CCPs) using multiple radio frequency (rf) power sources provides many opportunities to customize IEDs. In dual-frequency CCPs using a fundamental frequency and its second harmonic, varying the relative voltages, powers, and phases between the fundamental and second harmonic biases have demonstrated potential as control mechanisms for the shape of the IEDs. In this paper, we report on computational and experimental investigations of IED control in dual-frequency and triple-frequency CCPs where the phase between the fundamental and second harmonic frequency voltage waveform is used as a control variable. The operating conditions were 5–40 mTorr (0.67–5.33 Pa) in Ar and Ar/CF4/O2 gas mixtures. By changing the phase between the applied rf frequency and its second harmonic, the Electrical Asymmetric Effects was significant and not only shifted the dc self-bias but also affected plasma uniformity. When changing phases of higher harmonics, the energies and widths of the IEDs could be controlled. With the addition of a 3rd high-frequency source, the plasma density increased and uniformity improved. Computed results for IEDs were compared with experimental results using an ion energy analyzer in systems using rf phase locked power supplies.
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