Abstract
Accurate extraction of parasitic gate (RG), source (RS), drain (RD), and substrate (Rsub) resistances in MOSFETs is important in the modeling and characterization for DC and RF applications. Combining DC current–voltage and low-frequency capacitance–voltage characteristics with an equivalent circuit, we report a simple technique for a complete and separate extraction of parasitic resistances (RG, RS, RD, and Rsub) in individual MOSFETs without employing multiple devices or complicated S-parameter characterization with various device combinations. Intrinsic spreading component is also separated from the contact-related extrinsic component in RS and RD.
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