Modeling and Estimation of Band to Band Tunneling Current for Nanoscale Metal Gate (Hf/AlN<SUB><I>x</I></SUB>) Symmetric Double Gate MOSFET

Abstract

This paper present, analytical modeling and estimation of band to band tunneling current of metal gate (Hf/AlN x ) symmetric double gate MOSFETwith intrinsic silicon channel. To model this leakage current, we use the center and 2D analytical potential model to obtain the local electric field near drain end. In this paper, effect of insulator thickness has been shown on band to band tunneling current. Further, using dual metal gate (Hf/AlN x ) material as gate offers the lower tunneling currents. This feature of this device can be utilized in low power and high performance circuits.