Dual Metal Gate Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With Reduction in Ambipolar Current

Abstract

In this paper, to solve the problem of higher ambipolar leakage current (Iambipolar) of Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS SBMOS), we have incorporated dual metal gate (DMG) in place of single metal gate for the DE DS SBMOS. The proposed device is named as DMG DE DS SBMOS. In a proposed device, the gate is consisting of dual metal having different work functions. Therefore, the gate is divided in two parts named as auxiliary gate (AG) and tunneling gate (TG). AG and TG employed near the source and drain (S/D) ends, respectively. AG is mainly used to control the on-state performance and TG for the off-state performance by modulating the SB height and width at S/D end, respectively. Simulation results show that Iambipolar of the device has been successfully suppressed by choosing appropriate work functions for AG and TG without affecting the on-state current (Ion) of the device. The proposed device combines the advantage of dual metal gate and dielectric engineering to achieve improvement in the overall performance of the device. The proposed device exhibits high Ion, low Iambipolar and low subthreshold swing (SS). The simulations study verifies the use of the proposed device for low power applications.