Impact of underlap channel on analog/RF performance of dopant segregated schottky barrier MOSFET on ultra thin body SOI

Abstract

In this paper, we presents a detailed investigation of the impact of underlap channel on the analog/RF performance of Dopant Segregated Schottky Barrier MOSFET (DS-SB-MOSFET) on ultrathin body silicon-on-insulator (SOI). Using 2D simulations, the major analog/RF performance metrics such as transconductance (g m ), output conductance (g d ), transconductance generation factor (g m =I D ), cut-off frequency (f T ), total gate capacitance (C gg ), gain bandwidth product and unilateral power gain have been investigated for varying underlap channel length of DS-SB-MOSFET. Further, the device DC performance in terms of on-state current, subthreshold slope (SS), I ON /I OFF ratio and ambipolar leakage current is also investigated for the same. Analog/RF and DC performance of DS-SB-MOSFET without underlap channel is compared to DS-SB-MOSFET with underlap channel and it is found that DS-SB-MOSFET without underlap channel is superior to DS-SB-MOSFET with underlap channel for analog/RF applications. However, DS-SB-MOSFET without underlap channel has serious drawback of high SS, low I ON /I OFF ratio and higher ambipolar leakage current than the DS-SB-MOSFET with underlap channel.