Abstract
Electro-optic sensors based on the Pockels effect are key components for optical instrumentation due to their speed and accuracy. In this work, we propose a new electro-optic platform using two-dimensional photonic crystals of gallium arsenide and barium titanate (GaAs-BTO). This structure allows for the measurement of various electric field levels, from 0 kV/mm to 50 kV/mm, with a very high sensitivity and a compact size. The opto-geometric parameters of this sensor were chosen, optimized, and analyzed numerically using the Plane Wave Expansion (PWE) and Finite-Difference Time-Domain (FDTD) methods.
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