Abstract
The article presents the results of modeling a wideband power amplifier in the frequency bands of 0.1-4 GHz with a low noise level using simulation in CAD AWR Microwave. The analysis of the existing circuits is carried out and a variant of the circuit of a broadband power amplifier with a low noise level on the element base of the foundry of the Russian Federation is proposed. The Darlington circuit was used as a prototype. According to the Darlington scheme, transistors have parallel negative voltage feedback and are distinguished by an increased output voltage across a low resistance load. A transistor with four gates 50 nm wide was chosen for the simulation. The circuit also contains resistive feedback and inductors, which are included in the power supply circuit of the transistors. This foundation uses the GaAs pHEMT technological process. This technological process is standard and is available in almost all firms that provide services for the foundation MIS (monolithic integrated circuit) microwave. This technology makes it possible to manufacture power amplifiers in the ranges up to 32 GHz and output power up to 7 W. They have high gain, efficiency and a wide frequency range. As a result of the simulation, characteristics are obtained that are not inferior in their values to foreign counterparts, which allows us to conclude that it is possible to create a broadband power amplifier in the 0.1-4 GHz frequency band based on the foundry in the Russian Federation.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call