Abstract
The development of an accurate model for an inversion base transistor in the bipolar inversion channel field effect transistor (BICFET) configuration is investigated in this report. Simulations were accomplished through the use of the Medici software, acquired from Avant! Corporation of Sunnyvale, California. This software, which is capable of modeling semiconductor devices comprised of conventional and/or user-defined materials, impurities, structures and operating conditions, was used to develop a model based on experimental device results from Stanford University.
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