Abstract
We present the first RF measurements of the Ge/sub x/Si/sub 1-x//Si Bipolar Inversion Channel Field Effect Transistor demonstrating the potential of the device for high-speed applications. Molecular Beam Epitaxially-grown Ge/sub x/Si/sub 1-x//Si devices fabricated with 4 micron emitter widths demonstrated de-embedded f/sub t/'s of 28 GHz. The lateral delay due to the charging of the inversion base presently limits the high-speed performance as does the conventional collector-base capacitance of the contact junctions. DC current gains above 3000 have been achieved at room temperature; the gain improves to 3500 at 10 K.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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