MOCVD of TaN Using the All‐Nitrogen‐Coordinated Precursors [Ta(NEtMe)3(N‐tBu)], [Ta(NEtMe)(N‐tBu){C(N‐iPr)2(NEtMe)}2], and [Ta(NMeEt)2(N‐tBu){Me2N‐N(SiMe3)}

Abstract

AbstractThree different all nitrogen‐coordinated heteroleptic precursors, [Ta(NEtMe)3(N‐tBu)] (1), [Ta(NEtMe)(N‐tBu){C(N‐iPr)2‐(NEtMe)}2] (2), and [Ta(NMeEt)2(N‐tBu)(tdmh)] (3) (Et = ethyl, Me = methyl, tBu = tert‐butyl, iPr = isopropyl, tdmh = N‐trimethylsilyl‐N′,N′‐dimethylhydrazine) are tested in thermally activated metal–organic (MO)CVD of TaN thin films. Using 1 and 2, conducting cubic‐TaN films can be deposited (1: 4000 μΩ·cm; 2: 10000–20000 μΩ·cm), while 3 results in the formation of insulating silicon‐containing films with high levels of oxygen impurities. Raising the chemical complexity of precursors 2 and 3 with respect to 1 does not necessarily lead to high carbon incorporation, even in the absence of additional ammonia. Metal–insulator–semiconductor structures with TaN as the metal gate material are fabricated and characterized by capacitance–voltage (C–V) and current density–voltage (J–V) measurements. Precursor 3 is used to deposit insulating TaSiN(O) films in a large‐scale reactor on 150 mm prestructured metal oxide semiconductor (MOS) wafers.