Abstract
MOCVD of lead oxides using Pb(tmhd)2 precursor and water vapor has been studied. The addition of water results in significant increase of deposition rate at temperatures below 400 °C—a growth rate of 200 nm/h was demonstrated for the deposition temperature of 300 °C. Another important effect of water is improvement of film crystallinity—epitaxial growth of high-quality β-PbO on SrTiO3 and α-PbO on MgO has been achieved at 300 and 380 °C, respectively. The absence of carbon contamination of oxide films has been confirmed by XPS.
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