Abstract
Thick InN films were grown by metal-organic chemical vapor deposition on sapphire c-plane at different growth temperatures, and studied by Raman scattering. Sharp phonon peaks were observed in all samples, showing good crystalline quality. The E2-phonon modes, which are sensitive to the strain in the c-plane, showed a systematic variation in frequency with the growth temperature. This variation was attributed to thermal strains induced by the difference in thermal expansion coefficient between the InN layer and the sapphire substrate. Frequency of the high-frequency E2-phonon mode ν (in cm—1) varied with strain ε (in %) as ν = 50ε + 481.5. Residual strains in InN layers could be evaluated using this empirical formula.
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