Abstract
Raman spectroscopy is employed to study the evolution of the residual stresses along the growth direction of an ∼10μm thick wurtzite InN film. The analysis of the spectra, recorded with the excitation laser beam being parallel as well as perpendicular to the c axis of the film, clearly reveals the compressive character of the biaxial strain in the InN layer. The residual compressive strain increases with increasing distance from the InN∕GaN interface in agreement with the transmission electron microscopy observations, which additionally reveal that this is accompanied by a reduction of the threading dislocation density. The interplay between the epilayer/template lattice mismatch and the thermal expansion coefficients may account for these observations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
