Abstract
AbstractWe have investigated the structural and electrical characteristics of (BaxSr1−x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.
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