Abstract
BST thin films and BSR interlayers were deposited by pulsed laser deposition (PLD) and liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) onto Pt/TiO2/Si substrates, respectively. Ultrathin BSR conductive layers were inserted at the BST/Pt interface to improve the dielectric properties of BST thin films. BST films deposited on ultrathin BSR interlayers showed an improvement in roughness and microstructure compared with those without BSR layers in an overall range of BST film thickness. The temperature-independent interface capacities in BST/Pt and BST/BSR/Pt structures are approximately 8.9 and 20 µF/cm2, respectively. The dielectric properties of BST films were improved by the increase in interface capacity as well as roughness and microstructure using the BSR conductive layer which is similar to BST in crystal structure and chemical composition.
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