Abstract
Barium strontium titanate Ba 0.5Sr 0.5TiO 3 (BST) thin films have been deposited on Pt/Ti/SiO 2/Si substrates by a pulsed laser deposition method. The low-frequency dielectric responses of the BST films, grown at different substrate temperatures ( T s), were measured as functions of frequency in the frequency range from 1 kHz to 1 MHz. With increase of T s, the grain size of BST thin films became larger and the crystallinity was greatly improved, and then the dielectric permittivity increased, while the dielectric dispersion rose drastically. The origin of the large dielectric relaxation is believed to result from the aggravation of oxygen diffusion at the BST/Pt interface for the BST thin films grown at comparatively higher temperatures. This concept could be further explained by considering the influence of post-annealing in oxygen ambient on the dielectric properties of BST thin films. Our results reveal that the dielectric properties are strongly dependent on the processing conditions and the microstructure of thin films.
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