Abstract
We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.
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