Abstract
We have deposited gallium oxide (Ga 2 O 3 ) films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD), by a reaction of a trimethylgallium (TMGa) and oxygen (O 2 ) mixture. The effect of temperature on growth and structure of films has been investigated at temperatures of 500–600 °C. We revealed that the films were amorphous with very small crystallites. The films were smooth but the surface roughness increased with increasing the growth temperature.
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