Abstract
Highly polycrystalline copper indium diselenide (CuInSe2) thin films on molybdenum substrate were successfully grown at 330 °C through two-stage metal organic chemical vapor deposition (MOCVD) method by using two precursors at relatively mild conditions. First, phase pure InSe thin film was prepared on molybdenum substrate by using a single-source precursor, di-μ-methylselenobis(dimethylindium). Second, on this InSe/Mo film, bis(ethylisobutyrylacetato) copper(II) designated as Cu(eiac)2 was treated by MOCVD to produce CuInSe2 films. The thickness and stoichiometry of the product films were found to be easily controlled in this method by adjusting the process conditions. Also, there were no appreciable amounts of carbon and oxygen impurities in the prepared copper indium diselenide films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
