Abstract
A novel precursor based on the inclusion complex of β-cyclodextrin with is proposed for the deposition of cobalt oxide films by metallorganic chemical vapor deposition (MOCVD). Deposition is viable through an abnormal behavior of the inclusion molecules during heating. A decomposition mechanism based on experimental results is proposed, while the films are examined in terms of microstructure, electrical, and magnetic properties. A uniform, nanocrystalline structure of was revealed, along with impurities of silicide phases. The films presented a semiconducting behavior and minor in-plane magnetization.
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