Mobility coupling effects due to remote Coulomb scattering in thin‐film FD‐SOI CMOS devices

Abstract

Mobility coupling effects due to remote Coulomb scattering (RCS) are demonstrated for the first time in FD-SOI CMOS devices subjected to front and back interface electrical degradation. The evolution with stress time of the front and back threshold voltages as well as of the low field mobility values has been obtained. The front and back interface mobility degradations were then correlated to the stress induced interfacial charge variations for each stressed interface. This enabled the clear demonstration of the existence of mobility coupling effects between the front and back interface by RCS through the silicon film.