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Abstract
( Mn , Sb) doped Pb(Zr, Ti)O3 (PMSZT) thin film infrared (IR) detectors were integrated with Si substrates. The epitaxial PMSZT thin films, deposited on c-axis oriented YBa2Cu3O7−y (YBCO) bottom electrodes, show good ferroelectric properties with a remnant polarization Pr of 31 μC/cm2, a spontaneous polarization Ps of 38 μC/cm2, and a coercive field Ec of 21 kV/cm under an electric field of 76 kV/cm. Doping with Mn and Sb into Pb(Zr, Ti)O3 (PZT) not only decreased the Curie temperature TC from 350 °C for PZT to 175 °C for PMSZT, but also enhanced IR responsivity significantly. PMSZT thin films show high figures of merit, Fi of 15.5×10−9 C cm/J, Fv of 1758 cm2/C and Fd of 5×10−5 Pa−1/2 at 25 °C. IR detector arrays, fabricated with PMSZT films deposited on YBCO microbridges with an air gap between them and the substrate for reduced thermal mass, show a higher IR voltage responsivity compared to those without an air gap.
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