Abstract
X‐ray absorption near‐edge structure (XANES) is used to study the characteristics of different sites of Mn in the Ga1−xMnxN dilute magnetic semiconductor (DMS) with zinc‐blende structure. The XANES spectra of representative Mn occupation sites (substitutional MnGa, interstitial MnI, MnGa‐MnI dimer and Mn cluster) in GaN lattice are theoretically calculated and compared with experimental results. The substitutional Mn in GaN is characterized by a pre‐edge peak at 2.0 eV and a post‐edge multiple‐scattering peak at 29.1 eV. The peaks shift in position and drop in intensity dramatically for the interstitial MnI and MnGa‐MnI dimmer, and disappear completely for Mn clusters. We propose that the distinct characteristics of Mn K‐edge XANES spectra for different Mn sites favor to discriminate Mn occupations in GaMnN DMS.
Published Version
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